Field effect controlled, bipolar power semiconductor component with silicide layer
US4975782A · kind A · utility
26Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1989 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Feb 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an IGT (Insulated Gate Transistor), the short-circuiting between the n-type regions (5c) and the p-type regions (4b) of the n-type emitter layer or p-type base layer respectively is produced by a buried conducting layer (12), specifically in the form of a metal silicide layer. Regardless of the spacing between cathode contact (8) and gate (7), the length of the n-type regions (5c) can thereby be reduced to such an extent that latching-up of the component is virtually impossible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.