Semiconductor device and production process thereof, as well as wire bonding device used therefor
US4976393A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1987 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Dec 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor. In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.