Fluorine-containing base layer for multi-layer resist processes

US4978594A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James A. Bruce · Williston, US
• Michael L. Kerbaugh · Williston, US
• Ranee W. Kwong · Wappingers Falls, US
• Tanya N. Lee · Glen Cove, US
• Harold G. Linde · South Burlington, US
• Harbans S. Sachdev · Wappingers Falls, US

Key dates

• Filing date: Oct 17, 1988
• Grant date: Dec 18, 1990
• Expiry date: Oct 17, 2008

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/094
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A process for forming a pattern on a substrate utilizing photolithographic techniques. In this process a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the structure is reactive ion etched to transfer the pattern to the underlying substrate. The fluorine component provides an underlying structure free of residue and cracking.