James A. Bruce
28Patents
10h-index
47Co-inventors
75Inventor score
Filing activity: Dec 24, 1984 → Jan 26, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6147394A | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby | Electricity | 36 | Expired |
| US4978594A | Fluorine-containing base layer for multi-layer resist processes | Physics | 24 | Expired |
| US6395438B1 | Method of etch bias proximity correction | Physics | 24 | Expired |
| US5972570A | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby | Electricity | 22 | Expired |
| US5552718A | Electrical test structure and method for space and line measurement | Physics | 21 | Expired |
| US5614990A | Illumination tailoring system using photochromic filter | Physics | 20 | Expired |
| US5760483A | Method for improving visibility of alignment targets in semiconductor processing | Electricity | 16 | Expired |
| US6539321B2 | Method for edge bias correction of topography-induced linewidth variation | Physics | 11 | Expired |
| US6215190A | Borderless contact to diffusion with respect to gate conductor and methods for fabricating | Electricity | 11 | Expired |
| US7269808B2 | Design verification | Physics | 10 | Expired |
| US4612805A | Adhesion characterization test site | Physics | 8 | Expired |
| US7257247B2 | Mask defect analysis system | Physics | 7 | Expired |
| US6395624B1 | Method for forming implants in semiconductor fabrication | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6577406B2 | Structure for lithographic focus control features | Physics | 6 | Expired |
| US6303416A | Method to reduce plasma etch fluting | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6766507B2 | Mask/wafer control structure and algorithm for placement | Physics | 3 | Expired |
| US6338921B1 | Mask with linewidth compensation and method of making same | Physics | 3 | Expired |
| US6015750A | Method for improving visibility of alignment target in semiconductor processing | Electricity | 3 | Expired |
| US6300228A | Multiple precipitation doping process | Electricity | 2 | Expired |
| US8166423B2 | Photomask design verification | Physics | 2 | Active |
| US8219964B2 | Method for creating electrically testable patterns | Electricity | 1 | Active |
| US7492940B2 | Mask defect analysis system | Physics | 1 | Active |
| US7562337B2 | OPC verification using auto-windowed regions | Physics | 1 | Active |
| US8619236B2 | Determining lithographic set point using optical proximity correction verification simulation | Physics | 1 | Active |
| US7492941B2 | Mask defect analysis system | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.