Apparatus for selective deposition of metal thin film
US4979466A · kind A · utility
17Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 8, 1989 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Mar 8, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.