Method of removing a layer of organic matter
US4980022A · kind A · utility
32Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1990 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Mar 5, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.