Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure
US4980239A · kind A · utility
12Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Aug 24, 1988 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Aug 24, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31536
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A metallization layer structure includes an intermediate layer formed on an aluminum nitride ceramics base. The intermediate layer contains aluminum titanium nitride. A titanium layer is formed on the intermediate layer. A heat-resistant metallic layer is formed on the titanium layer. A metallic layer for facilitating soldering or brazing is formed on the heat-resistant metallic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.