P-N junction semiconductor device and method of fabrication
US4980749A · kind A · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1989 |
| Grant date | Dec 25, 1990 |
| Priority date | — |
| Expiry date | Mar 7, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
Abstract
A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junciton. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.