Koji Ohtsuka
23Patents
12h-index
21Co-inventors
77Inventor score
Filing activity: Nov 29, 1988 → Jun 27, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7323723B2 | Semiconductor light-emitting device using phosphors for performing wavelength conversion | Electricity | 224 | Expired |
| US6545457B2 | Current detector utilizing hall effect | Electricity | 85 | Expired |
| US6462531B1 | Current detector having a hall-effect device | Electricity | 83 | Expired |
| US6797153B1 | Catalyst for hydrocracking of heavy oils and method of hydrocracking heavy oils | Performing Operations; Transporting | 82 | Expired |
| US6683448B1 | Large current detector having a hall-effect device | Electricity | 80 | Expired |
| US6424018B1 | Semiconductor device having a hall-effect element | Electricity | 78 | Expired |
| US6841989B2 | Hall-effect current detector | Electricity | 66 | Expired |
| US6759841B2 | Hall-effect current detector | Electricity | 61 | Expired |
| US6812687B1 | Semiconductor current detector of improved noise immunity | Electricity | 59 | Expired |
| US6791313B2 | Electrical current detector having a U-shaped current path and hall-effect device | Electricity | 50 | Expired |
| US5027166A | High voltage, high speed Schottky semiconductor device and method of fabrication | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7176480B2 | Light-emitting semiconductor device having a quantum well active layer, and method of fabrication | Electricity | 14 | Expired |
| US5112774A | Method of fabricating a high-voltage semiconductor device having a rectifying barrier | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5814838A | Light emitting semiconductor element with ZN doping | Electricity | 11 | Expired |
| US5221638A | Method of manufacturing a Schottky barrier semiconductor device | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7780565B2 | Differential device | Mechanical Engineering; Lighting; Heating | 10 | Active |
| US5081510A | High-voltage semiconductor device having a rectifying barrier, and method of fabrication | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5158909A | Method of fabricating a high voltage, high speed Schottky semiconductor device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6890791B2 | Compound semiconductor substrates and method of fabrication | Electricity | 7 | Expired |
| US5075740A | High speed, high voltage schottky semiconductor device | Electricity | 7 | Expired |
| US4980749A | P-N junction semiconductor device and method of fabrication | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5148240A | High voltage, high speed schottky semiconductor device and method of fabrication | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5006483A | Fabrication of P-N junction semiconductor device | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.