Chemical vapor deposition of tungsten silicide using silicon sub-fluorides

US4981723A · kind A · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Ikuo Hirase · Toyosato, JP
• Denis Rufin · Hinsdale, US
• Michael Schack · Düsseldorf, DE
• Tooru Sumiya · Yokohama, JP
• Masamichi Matsuura · Yokohama, JP
• Sadayuki Urishima · Yokohama, JP

Key dates

• Filing date: Oct 17, 1988
• Grant date: Jan 1, 1991
• Expiry date: Oct 17, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32053
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for depositing tungsten silicide films on a silicon substrate by chemical vapor deposition, comprises the steps of producing a silicon sub-fluoride by passing SiF.sub.4 over pieces of silicon heated in a tubular oven about 1200.degree.-1500.degree. K., mixing gaseous WF.sub.6 with the silicon sub-fluoride, and then immediately depositing the tungsten silicide films on said silicon substrate.