Schottky photodiode with silicide layer
US4982246A · kind A · utility
4Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1989 |
| Grant date | Jan 1, 1991 |
| Priority date | — |
| Expiry date | Jun 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/227
Abstract
A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.