Silicide bridge contact process
US4983544A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1986 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Oct 20, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a bridge contact between a source diffusion region of a transfer gate FET and a polysilicon-filled trench storage capacitor electrodes of the FET. A layer of titanium is evaporated at a temperature of approximately 370.degree. C., so that the titanium has a substantially columnar grain structure and a minimum of matrix material. The bottom portions of the columnar grains have a lateral length that approximates the lateral length of the dielectric separating the source diffusion from the poly-filled trench. Thus, upon sintering at 700.degree. C. in an N.sub.2 atmosphere, titanium silicide will form over all exposed silicon regions as well as the dielectric, without shorting the FET electrodes together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.