Field effect transistor with multiple grooves
US4984036A · kind A · utility
13Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1989 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Jun 19, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.