High voltage thin film transistor with second control electrode
US4984041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1989 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Jul 28, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A high voltage thin film transistor comprising an amorphous semiconductor charge transport layer, laterally disposed source and drain electrodes, a first control electrode with one edge laterally overlapping the source electrode and an other edge laterally spaced from the drain electrode. A source of high potential is applied to the drain electrode and a source of low potential is applied to the first control electrode in a time varying manner so as to form an accumulation channel in the charge transport layer, opposite to the first control electrode. Device performance is improved by including a second control electrode disposed in the same plane as the first control electrode and biased for preventing the formation of defects within the charge transport layer adjacent the other edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.