Michael Hack
159Patents
21h-index
85Co-inventors
93Inventor score
Filing activity: Jun 25, 1984 → Apr 10, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6683333B2 | Fabrication of electronic circuit elements using unpatterned semiconductor layers | Electricity | 337 | Expired |
| US5153420A | Timing independent pixel-scale light sensing apparatus | Electricity | 254 | Expired |
| US5204661A | Input/output pixel circuit and array of such circuits | Physics | 250 | Expired |
| US5081513A | Electronic device with recovery layer proximate to active layer | Electricity | 199 | Expired |
| US7050835B2 | Intelligent multi-media display communication system | Emerging Cross-Sectional Technologies | 117 | Expired |
| US7745986B2 | Transflective display having full color OLED blacklight | Electricity | 87 | Active |
| US5366926A | Low temperature process for laser dehydrogenation and crystallization of amorphous silicon | Emerging Cross-Sectional Technologies | 79 | Expired |
| US8884316B2 | Non-common capping layer on an organic device | Electricity | 74 | Active |
| US5491347A | Thin-film structure with dense array of binary control units for presenting images | Physics | 68 | Expired |
| US4882295A | Method of making a double injection field effect transistor | Emerging Cross-Sectional Technologies | 66 | Expired |
| US6803720B2 | Highly stable and efficient OLEDs with a phosphorescent-doped mixed layer architecture | Electricity | 62 | Expired |
| US5083175A | Method of using offset gated gap-cell thin film device as a photosensor | Electricity | 47 | Expired |
| US5401982A | Reducing leakage current in a thin-film transistor with charge carrier densities that vary in two dimensions | Electricity | 45 | Expired |
| US6019796A | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5782665A | Fabricating array with storage capacitor between cell electrode and dark matrix | Physics | 38 | Expired |
| US8502445B2 | RGBW OLED display for extended lifetime and reduced power consumption | Electricity | 37 | Active |
| US5703382A | Array having multiple channel structures with continuously doped interchannel regions | Physics | 36 | Expired |
| US5733804A | Fabricating fully self-aligned amorphous silicon device | Emerging Cross-Sectional Technologies | 30 | Expired |
| US8766531B1 | Wearable display | Electricity | 30 | Active |
| US5717223A | Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap | Electricity | 22 | Expired |
| US6107641A | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5536932A | Polysilicon multiplexer for two-dimensional image sensor arrays | Electricity | 20 | Expired |
| US7559100B2 | Cover attachment device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6020223A | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4547621A | Stable photovoltaic devices and method of producing same | Emerging Cross-Sectional Technologies | 17 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.