Solid-state image sensor
US4984047A · kind A · utility
41Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1988 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Mar 21, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
A solid-state image sensor is disclosed which comprises a pn photodiode formed in a P-type substrate. A charge-coupled device is disposed adjacent the photodiode for receiving signal carriers from the diode. A lateral-overflow drain is disposed adjacent the photodiode for receiving carriers from the photodiode. In order to provide a simplified image sensor, a virtual gate is formed between the photodiode and the drain to effect the flow of excess carriers from the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.