Eric G. Stevens
70Patents
19h-index
40Co-inventors
84Inventor score
Filing activity: Aug 19, 1985 → May 15, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5625210A | Active pixel sensor integrated with a pinned photodiode | Electricity | 359 | Expired |
| US5235198A | Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel | Electricity | 135 | Expired |
| US5292682A | Method of making two-phase charge coupled device | Emerging Cross-Sectional Technologies | 134 | Expired |
| US5111263A | Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode | Electricity | 128 | Expired |
| US6100551A | Active pixel sensor integrated with a pinned photodiode | Electricity | 99 | Expired |
| US5904493A | Active pixel sensor integrated with a pinned photodiode | Electricity | 98 | Expired |
| US5440343A | Motion/still electronic image sensing apparatus | Electricity | 98 | Expired |
| US6027955A | Method of making an active pixel sensor integrated with a pinned photodiode | Electricity | 95 | Expired |
| US5841159A | Active pixel sensor integrated with a photocapacitor | Electricity | 93 | Expired |
| US5192990A | Output circuit for image sensor | Electricity | 46 | Expired |
| US4984047A | Solid-state image sensor | Electricity | 41 | Expired |
| US5070380A | Transfer gate for photodiode to CCD image sensor | Electricity | 33 | Expired |
| US6730899B1 | Reduced dark current for CMOS image sensors | Electricity | 32 | Expired |
| US6297070A | Active pixel sensor integrated with a pinned photodiode | Electricity | 24 | Expired |
| US5130774A | Antiblooming structure for solid-state image sensor | Electricity | 23 | Expired |
| US7728277B2 | PMOS pixel structure with low cross talk for active pixel image sensors | Electricity | 21 | Active |
| US8076746B2 | Back-illuminated image sensors having both frontside and backside photodetectors | Electricity | 20 | Active |
| US5306931A | CCD image sensor with improved antiblooming characteristics | Electricity | 20 | Expired |
| US4949183A | Image sensor having multiple horizontal shift registers | Electricity | 19 | Expired |
| US6351001B1 | CCD image sensor | Electricity | 18 | Expired |
| US6306676A | Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors | Electricity | 17 | Expired |
| US5192920A | High-sensitivity, low-noise transistor amplifier | Electricity | 16 | Expired |
| US5040071A | Image sensor having multiple horizontal shift registers | Electricity | 16 | Expired |
| US5235196A | Transfer region design for charge-coupled device image sensor | Electricity | 16 | Expired |
| US5349215A | Antiblooming structure for solid-state image sensor | Electricity | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.