Low voltage-operated semiconductor integrated circuit
US4984202A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1990 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Mar 20, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4074
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A large-scale semiconductor integrated circuit comprising a low voltage-operated CMOS internal circuit, input and output circuits having bipolar transistors, said low voltage-operated CMOS internal circuit being supplied with an internal power supply voltage which is produced by dropping an external power supply voltage, and a level shifting circuit which converts the levels of signals in the chip. The input and output signals have the ECL level or the TTL level. The low voltage-operated CMOS internal circuit includes, for example, a DRAM of greater than 4 megabits and a microprocessor, and the internal operation voltage is smaller than 1.5 V. By the structure, a high-speed, low-power-consumption and low-noise semiconductor device is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.