Goro Kitsukawa
70Patents
19h-index
83Co-inventors
87Inventor score
Filing activity: Jul 5, 1985 → Jun 26, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4999519A | Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier | Electricity | 131 | Expired |
| US5274601A | Semiconductor integrated circuit having a stand-by current reducing circuit | Physics | 90 | Expired |
| US5386135A | Semiconductor CMOS memory device with separately biased wells | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5197033A | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Electricity | 46 | Expired |
| US5497023A | Semiconductor memory device having separately biased wells for isolation | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4984202A | Low voltage-operated semiconductor integrated circuit | Physics | 36 | Expired |
| US5086238A | Semiconductor supply incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5148255A | Semiconductor memory device | Electricity | 34 | Expired |
| US4697109A | Level converter circuit | Electricity | 34 | Expired |
| US5045904A | Semiconductor device including an improved trench arrangement | Electricity | 33 | Expired |
| US5386394A | Semiconductor memory device for performing parallel operations on hierarchical data lines | Physics | 32 | Expired |
| US6740958B2 | Semiconductor memory device | Electricity | 32 | Expired |
| US5150325A | Bi-CMOS semiconductor memory device, including improved layout structure and testing method | Physics | 28 | Expired |
| US5324982A | Semiconductor memory device having bipolar transistor and structure to avoid soft error | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5377156A | Semiconductor device incorporating main and stand-by boosted internal power supply for compensating for deviation on operating condition and fabrication process conditions | Electricity | 26 | Expired |
| US5604697A | Semiconductor | Physics | 25 | Expired |
| US5822267A | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Electricity | 24 | Expired |
| US6067257A | Semiconductor integrated circuit device having step-down voltage circuit | Physics | 21 | Expired |
| US5703825A | Semiconductor integrated circuit device having a leakage current reduction means | Electricity | 19 | Expired |
| US5844853A | Memory regulator control method with flexibility for a wide change in supply voltage | Physics | 19 | Expired |
| US4873673A | Driver circuit having a current mirror circuit | Physics | 19 | Expired |
| US6208010A | Semiconductor memory device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5448526A | Semiconductor integrated circuit device | Physics | 17 | Expired |
| US5255225A | Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit | Physics | 17 | Expired |
| US6970391B2 | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions | Electricity | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.