Enhanced plasma etching
US4985112A · kind A · utility
16Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1987 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Feb 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/0017
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.