Sample treating method and apparatus
US4985113A · kind A · utility
42Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1990 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Mar 7, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sample treating method and apparatus adapted to treat a sample such as a semiconductor element substrate or the like and, particularly, a sample that must be etched and anticorrosion-treated. The adhered matters formed by the etching of the sample are removed from the sample sufficiently and easily when the etched sample is treated by utilizing the plasma of an anticorrosion gas that is capable of removing the adhered matters. There is required no wet-type anticorrosion treatment enabling the throughput to be improved in treating the samples that must be etched and anticorrosion-treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.