MOS-controlled bipolar power semiconductor component

US4985741A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Thomas Stockmeier · Baden, CH

Key dates

• Filing date: Jun 14, 1990
• Grant date: Jan 15, 1991
• Expiry date: Jun 14, 2010

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

In an MOS-controlled bipolar power semiconductor component, a recombination layer (10), which is doped with the same polarity as the base layer but more highly, is inserted, starting with the structure of an IGBT, into the base layer between anode (A) and cathode (K), which recombination layer divides the base layer into an upper and lower base layer (7a and 7b, respectively). The resultant structure forms a series circuit of MOSFET (T) and PIN diode (D) which is free of latch-up and provides the possibility of higher blocking voltages.