Method of forming conductors within an insulating substrate
US4985990A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1988 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Dec 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electrically conductive line between two layers of insulating material and method for connecting the line through both layers of the insulating material to the opposite surfaces is provided. In the method, first, second and third layers of insulating material are provided wherein said first and third layers are separated by said second layer of insulating material which is different in etch rate from the first and third layers. The edge portion of all three layers is exposed and the insulating layer of the second material is selectively etched to remove the revealed edge portion and provide a slot between the first and third layers of insulating material. Also openings are provided in both the first and third layers of insulating material which communicate with the slot and extend respectively through the layers of the first and third insulating material. Thereafter, a conductive material such as tungsten is deposited in the slot and the openings and also on the face of the stacked insulating material. Finally, the excess tungsten is removed from the faces of the insulating material of the first and third layers leaving a conductive line sandwiched between t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.