Method for selectively filling contacts or vias or various depths with CVD tungsten
US4987099A · kind A · utility
81Cited by
13References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 29, 1989 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Dec 29, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making planarized metallization on a semiconductor substrate employing selective deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.