Process for forming high purity thin films
US4987102A · kind A · utility
409Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1989 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Dec 4, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.