Method for deposition of silicon oxide on a wafer
US4988533A · kind A · utility
50Cited by
19References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1988 |
| Grant date | Jan 29, 1991 |
| Priority date | — |
| Expiry date | May 27, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.