Method for etching semiconductor materials using a remote plasma generator
US4988644A · kind A · utility
28Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1989 |
| Grant date | Jan 29, 1991 |
| Priority date | — |
| Expiry date | May 23, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator includes an inlet tube, a discharge tube in fluid communication with the inlet tube, an excitation cavity surrounding the discharge tube, an outlet tube in fluid communication with the discharge tube and a process chamber, and an injection tube in the outlet tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.