Semiconductor capacitor
US4989056A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1989 |
| Grant date | Jan 29, 1991 |
| Priority date | — |
| Expiry date | May 10, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
A capacitor having a first electrode, a thin insulator formed on said first electrode and a second electrode formed on said insulator wherein said first and second electrodes are composed of semiconductors that are of complementary conductivity type. Therefore, the current that flows through the capacitor insulator is efficiently suppressed while the thickness of the insulator is decreased, making it possible to realize a capacitor of a small area yet having a large capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.