Atsushi Hiraiwa
33Patents
14h-index
73Co-inventors
84Inventor score
Filing activity: May 19, 1981 → Jul 8, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5523058A | Ultrasonic irradiation apparatus and processing apparatus based thereon | Human Necessities | 309 | Expired |
| US4481229A | Method for growing silicon-including film by employing plasma deposition | Chemistry; Metallurgy | 129 | Expired |
| US5227329A | Method of manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 123 | Expired |
| US6737318B2 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 105 | Expired |
| US5466621A | Method of manufacturing a semiconductor device having silicon islands | Emerging Cross-Sectional Technologies | 101 | Expired |
| US5346834A | Method for manufacturing a semiconductor device and a semiconductor memory device | Emerging Cross-Sectional Technologies | 79 | Expired |
| US5504029A | Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs | Electricity | 79 | Expired |
| US5936726A | Inspection method, inspection apparatus and method of production of semiconductor device using them | Physics | 78 | Expired |
| US4365264A | Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer | Electricity | 62 | Expired |
| US5153685A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 57 | Expired |
| US5115289A | Semiconductor device and semiconductor memory device | Electricity | 56 | Expired |
| US5091761A | Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover | Electricity | 56 | Expired |
| US5053849A | Transistor with overlapping gate/drain and two-layered gate structures | Electricity | 43 | Expired |
| US5930624A | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring | Electricity | 17 | Expired |
| US5426326A | Semiconductor device including arrangement for reducing junction degradation | Electricity | 12 | Expired |
| US6713353B1 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 8 | Expired |
| US4860071A | Semiconductor memory using trench capacitor | Electricity | 7 | Expired |
| US4989056A | Semiconductor capacitor | Electricity | 6 | Expired |
| US7211497B2 | Method for fabricating semiconductor devices | Electricity | 6 | Expired |
| US6821854B2 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 5 | Expired |
| US5753550A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 5 | Expired |
| US7335561B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 4 | Expired |
| US6281071A | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring | Electricity | 2 | Expired |
| US7262101B2 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 2 | Expired |
| US7560772B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.