Read only memory device including a superconductive electrode
US4990489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1988 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Jul 6, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/923
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.