High current thin film transistor
US4990977A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1988 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Mar 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6704
Abstract
A thin film transistor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, at least one finger-like source electrode, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, and a drain electrode layer contiguous with the semiconductor layer. The length of the current path between the source electrode and the drain electrode layer is defined by a first path portion located at the semiconductor/gate dielectric interface and extending, between adjacent source elements, substantially parallel to the interface, and a second path portion whose length is substantially coextensive with the thickness of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.