Thin film transistor and a liquid crystal display device using same
US4990981A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1989 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Jan 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.