Electrode structure for silicon carbide semiconductors
US4990994A · kind A · utility
42Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Sep 5, 1989 |
| Grant date | Feb 5, 1991 |
| Priority date | — |
| Expiry date | Sep 5, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of the silicon carbide single-crystal is laminated with a metal layer of titanium, aluminum, chromium or molybdenum, or with the metal layer and an electrically conductive protective layer formed over the metal layer to provide an ohmic electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.