Method of making a semiconductive structure useful as a pressure sensor
US4993143A · kind A · utility
72Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1990 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Mar 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.