Method of fabricating a semiconductor device using a tri-layer structure and conductive sidewalls
US4994400A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1989 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Jan 27, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is made from a body of semiconductor material having a layer of dielectric material and a first layer of conductive material over a main face of the body, the layers each having an opening therein through which an area of the main face of the body of semiconductor material is exposed. A second layer of conductive material is formed over the sides of the opening and the conductor material, whereby the second layer of conductive material is in conductive contact with the first layer of conductive material along the sides of the opening. Material of the second layer of conductive material is removed to a depth such that a portion of the main face of the body of semiconductor material is exposed but a sidewall of conductive material remains along a side of the opening and provides an electrically conductive connection between the first layer of conductive material and the body of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.