Epitaxial film growth using low pressure MOCVD
US4994408A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 6, 1989 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Feb 6, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing high quality epitaxial films using low pressure MOCVD that includes providing a substrate that is misoriented from a singular plane, placing the substrate into an MOCVD reactor at a total pressure of less than 0.2 atmospheres and then growing an epitaxial film on the substrate. When providing a misoriented gallium arsenide substrate, the MOCVD reactor is set at a temperature in the range of 650 to 750 degrees centigrade to grow an aluminum gallium arsenide film. This temperature is substantially lower than that at which aluminum gallium arsenide epitaxial films are commonly grown and the resulting film has a smooth surface morphology and enhanced photoluminesence properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.