Heterojunction confined channel FET
US4994868A · kind A · utility
8Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1988 |
| Grant date | Feb 19, 1991 |
| Priority date | — |
| Expiry date | Dec 6, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/801
Abstract
A new GaAs FET structure is provided by a process which provides a GaAs channel between AlGaAs layers and wherein the GaAs channel has a higher active carrier concentration than either adjacent AlGaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.