Method of forming resist pattern and thermally stable and highly resolved resist pattern
US4996122A · kind A · utility
2Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | Mar 20, 1990 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Mar 20, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Positive photoresist compositions are provided which contain PA0 (a) a mixture of mono-, di-, and triesters of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinone-2-diazo-4-sulfonic acid and PA0 (b) a novolak resin selected from resins prepared from a phenolic component having a high p-cresol content or from a mixture of formaldehyde and an aromatic aldehyde.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.