Radiation sensitive materials and devices made therewith
US4996136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1989 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Feb 24, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.