Vertical thin film transistor and optical sensor having leakage current suppression elements
US4996573A · kind A · utility
7Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1989 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Oct 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
A thin film transistor and optical sensor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, a source electrode comprising finger elements, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, a drain electrode layer contiguous with the semiconductor layer, barrier elements for inhibiting a drain field from reaching the source electrode, and a transparent, electrically conductive drain contact member contiguous with said drain electrode layer, through which optical energy may pass to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.