Radiation-hardened semiconductor device with surface layer

US4998155A · kind A · utility

Assignee

• Director-General of Agency of Industrial Science and Technology · JP

Inventors

• Kikuo Watanabe · Nagoya, JP
• Tohru Nakamura · Hoya, DE
• Toru Toyabe · Kokubunji, JP
• Takahiro Okabe · Matsuyama, JP
• Minoru Nagata · Kawasaki, JP

Key dates

• Filing date: Jul 13, 1987
• Grant date: Mar 5, 1991
• Expiry date: Jul 13, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/906

Abstract

A radiation-hardened semiconductor device including a bipolar transistor is disclosed in which a highly-doped layer equal in conductivity type to and larger in impurity concentration than the base region of the transistor is formed in that portion of the surface of the base region which exists beneath an insulating film, to prevent minority carriers injected into the base region, from reaching the above-mentioned surface portion. Thus, the injected minority carriers can reach a collector region without being extinguished by the recombination at the surface of the base region.