Toru Toyabe
6Patents
5h-index
24Co-inventors
59Inventor score
Filing activity: Nov 21, 1977 → Sep 8, 1993
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4172260A | Insulated gate field effect transistor with source field shield extending over multiple region channel | Electricity | 58 | Expired |
| US5408116A | Grooved gate transistor having source and drain diffused layers with specified groove corner shape | Electricity | 38 | Expired |
| US5258625A | Interband single-electron tunnel transistor and integrated circuit | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5422496A | Interband single-electron tunnel transistor and integrated circuit | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4429326A | I.sup.2 L Memory with nonvolatile storage | Electricity | 7 | Expired |
| US4998155A | Radiation-hardened semiconductor device with surface layer | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.