Method of etching crystalline material with etchant injection inlet
US4999083A · kind A · utility
10Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1989 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Oct 2, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.