Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material
US4999314A · kind A · utility
42Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1989 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Apr 4, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.