Metallization processing
US4999317A · kind A · utility
12Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1989 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Sep 29, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents such flaking by, first, removing the dielectric from the back side, edge, and "clip-mark" areas of the wafer and, second, depositing a glue layer on remaining dielectric on the face of the wafer. Removal of dielectric material is by etching in the presence of a protective layer on the face of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.