Vertical semiconductor laser with lateral electrode contact
US4999843A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1990 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Jan 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical laser is typically formed by successive horizontal layers, epitaxially grown on a substrate, suitable for forming a bottom mirror, a bottom cladding layer, an active region, a top cladding layer, and a top mirror. In prior art, one of a pair of electrodes for enabling electrical pumping the laser--the "top" electrode--is attached to the top surface of the top mirror, whereby undesirably large amounts of heat are generated because of the relatively high impedance of the top mirror. To reduce this heat generation, the laser is redesigned to enable the top electrode to make lateral contact with the top cladding layer, whereby the impedance and hence the power loss are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.