Ya-Hong Xie
41Patents
14h-index
32Co-inventors
81Inventor score
Filing activity: Jan 9, 1990 → Aug 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5442205A | Semiconductor heterostructure devices with strained semiconductor layers | Electricity | 201 | Expired |
| US5221413A | Method for making low defect density semiconductor heterostructure and devices made thereby | Emerging Cross-Sectional Technologies | 118 | Expired |
| US5767561A | Integrated circuit device with isolated circuit elements | Electricity | 65 | Expired |
| US7118784B1 | Method and apparatus for controlling nucleation in self-assembled films | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5888885A | Method for fabricating three-dimensional quantum dot arrays and resulting products | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5063569A | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces | Electricity | 31 | Expired |
| US5239193A | Silicon photodiode for monolithic integrated circuits | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7732237B2 | Quantum dot based optoelectronic device and method of making same | Emerging Cross-Sectional Technologies | 27 | Active |
| US5736749A | Integrated circuit device with inductor incorporated therein | Electricity | 22 | Expired |
| US5308444A | Method of making semiconductor heterostructures of gallium arsenide on germanium | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6312581A | Process for fabricating an optical device | Physics | 17 | Expired |
| US5141878A | Silicon photodiode for monolithic integrated circuits and method for making same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5012486A | Vertical cavity semiconductor laser with lattice-mismatched mirror stack | Electricity | 16 | Expired |
| US4999843A | Vertical semiconductor laser with lateral electrode contact | Electricity | 15 | Expired |
| US6395611B1 | Inductor or low loss interconnect and a method of manufacturing an inductor or low loss interconnect in an integrated circuit | Electricity | 12 | Expired |
| US7186626B2 | Method for controlling dislocation positions in silicon germanium buffer layers | Electricity | 10 | Expired |
| US6370307B1 | Optical device formed on a substrate with thermal isolation regions formed therein | Physics | 6 | Expired |
| US7935956B2 | Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers | Emerging Cross-Sectional Technologies | 6 | Active |
| US7459731B2 | Device containing isolation regions with threading dislocations | Electricity | 5 | Active |
| US6136673A | Process utilizing selective TED effect when forming devices with shallow junctions | Electricity | 4 | Expired |
| US7517776B2 | Method for controlling dislocation positions in silicon germanium buffer layers | Electricity | 3 | Active |
| US6495385B1 | Hetero-integration of dissimilar semiconductor materials | Electricity | 3 | Expired |
| US7045437B1 | Method for fabricating shallow trenches | Electricity | 3 | Expired |
| US7402884B2 | Low crosstalk substrate for mixed-signal integrated circuits | Electricity | 3 | Active |
| US10001442B2 | Optical fiber-based hybrid SERS platform for in vivo detection of bio-molecules | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.