Plasma etching apparatus and method
US5002631A · kind A · utility
53Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1990 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Mar 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30621
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Reactive ion plasma etching apparatus and method are based upon the discovery of enhanced uniformity of etching at low workpiece temperatures. With cooling to sufficiently low temperatures, spontaneous etching is inhibited and etching uniformity is controlled not by gas flow and pressure but rather by ion flux. As a result, one can eliminate uniformity enhancing apparatus which heretofore obstructed optical access to the workpiece, provide window means permitting optical access to a major portion of the workpiece and employ sophisticated optical monitoring techniques during the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.