Method and apparatus for etching semiconductor materials
US5002632A · kind A · utility
433Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1989 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Nov 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for the etching of semiconductor materials (14) is disclosed. The apparatus (10) includes a process chamber (12) having a remote generator (16) in fluid communication with the process chamber (12) for converting a noble gas (34) to a metastable gas (36). An etchant gas (40) is subsequently brought into the chamber (12) adjacent to the material (14), to mix and react with the metastable gas (36) at activation zone (38). The metastable gas (36) collides with the etchant gas (40) to cause the mixture to selectively etch the material 14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.