Semiconductor light-emitting diode and method of manufacturing the same
US5005057A · kind A · utility
61Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1990 |
| Grant date | Apr 2, 1991 |
| Priority date | — |
| Expiry date | Apr 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.